Samsung's 970 EVO Plus line of solid-state drives is part of their third generation of retail M.2 form factor SSDs. These drives run at a full PCI-Express 3.0 x4 speed, which provides lots bandwidth and results in performance that is several times what a SATA III based SSD can provide. This 500GB model has sequential read speeds of up to 3.5GB/s with write speeds up to 3.2GB/s.
The limitation of these EVO Plus series drives, however, is that not all of the memory on the drive is capable of those speeds. A portion is, and therefore is used as a cache, but the rest of the drive has slower write speeds. That can show up in situations where a lot of data is being written at once: after a time, as the faster part of the drive is used up, the write speeds will drop substantially. This situation is not likely to arise in typical desktop usage, but can show up in some workstation loads.
Please note that some M.2 slots, especially on older motherboards, may not run at the full PCIe x4 this SSD is capable of. In such cases, performance will be limited by the speed of the slot.
The limitation of these EVO Plus series drives, however, is that not all of the memory on the drive is capable of those speeds. A portion is, and therefore is used as a cache, but the rest of the drive has slower write speeds. That can show up in situations where a lot of data is being written at once: after a time, as the faster part of the drive is used up, the write speeds will drop substantially. This situation is not likely to arise in typical desktop usage, but can show up in some workstation loads.
Please note that some M.2 slots, especially on older motherboards, may not run at the full PCIe x4 this SSD is capable of. In such cases, performance will be limited by the speed of the slot.
Model: Samsung MZ-V7S500B/AM
Specifications
| Capacity | 500 GB |
| Interface | PCIe 3.0 x4 |
| Form Factor | M.2 2280 |
| Endurance (TBW) | 300 TBW |
| Peak Power Draw | 9 Watts |
Performance | |
| Sequential Read (Peak) | 3,500 MB/s |
| Sequential Write (Peak) | 3,200 MB/s |
| Random 4KB Read | 480,000 IOPS |
| Random 4KB Write | 550,000 IOPS |
Features
- INTERFACE: PCIe Gen 3.0 x4, NVMe 1.3
- STORAGE MEMORY: Samsung V-NAND 3-bit MLC
- TRIM SUPPORT: Yes
- S.M.A.R.T SUPPORT: Yes
- ENCRYPTION SUPPORT: AES 256-bit Encryption (Class 0), TCG/Opal, IEEE1667 (Encrypted drive)
